Si9939DY Vishay Siliconix Complimentary 30-V (D-S) MOSFET VDS (V) N Ch N-Channel l rDS(on) () ID (A) 0.05 @ VGS = 10 V 3.5 0.07 @ VGS = 6 V 3 0.08 @ VGS = 4.5 V 2.5 0.10 @ VGS = –10 V 3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V 3 0.16 @ VGS = –4.5 V 2.5 D1 D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 Top View D2 N-Channel MOSFET D2 P-Channel MOSFET Symbol N-Channel P-Channel Drain-Source Voltage Parameter VDS 30 –30 Gate-Source Voltage VGS 20 20 3.5 3.5 2.8 2.8 IDM 20 20 IS 1.7 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID PD Unit V A –1.7 2.0 1.3 W –55 to 150 C Symbol N- or P- Channel Unit RthJA 62.5 C/W TJ, Tstg Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70146 S-00652—Rev. G, 27-Mar-00 www.vishay.com FaxBack 408-970-5600 1 Si9939DY Vishay Siliconix Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z Zero Gate G Voltage V l Drain D i Current C b O S On-State Drain D i Current C b D i S Drain-Source On-State O S Resistance R i Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = –250 mA P-Ch –1.0 V VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = –24 V, VGS = 0 V P-Ch –1 VDS = 15 V, VGS = 0 V, TJ = 70C N-Ch 5 VDS = –15 V, VGS = 0 V, TJ = 70C P-Ch VDS w 5 V, VGS = 10 V N-Ch 20 VDS v –5 V, VGS = –10 V P-Ch –20 VDS w 5 V, VGS = 4.5 V N-Ch 3.5 VDS v –5 V, VGS = –4.5 V P-Ch –3.5 VGS = 10 V, ID = 3.5 A N-Ch 0.04 0.05 VGS = –10 V, ID = 3.5 A P-Ch 0.074 0.10 VGS = 6 V, ID = 3 A N-Ch 0.045 0.07 VGS = – 6 V, ID = 3 A P-Ch 0.090 0.12 VGS = 4.5 V, ID = 2.5 A N-Ch 0.054 0.08 VGS = –4.5 V, ID = 2 A P-Ch 0.115 0.16 VDS = 15 V, ID = 3.5 A N-Ch 9 VDS = –15 V, ID = –3.5 A P-Ch 6 IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2 IS = –1.7 A, VGS = 0 V P-Ch –0.75 –1.2 N-Ch 14 35 P-Ch 14.5 35 N-Ch 1.9 P-Ch 2.7 N-Ch 2.8 P-Ch 3.5 N-Ch 10 30 P-Ch 11 30 tr N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 10 40 P-Ch 11 40 td(off) P-Channel 15 V VDD = –15 V, RL = 15 W ID ^ –1 1 A, VGEN = –10 10 V, RG = 6 W N-Ch 26 50 P-Ch 30 50 N-Ch 10 50 P-Ch 12 50 N-Ch 60 120 P-Ch 40 100 IDSS ID(on) rDS(on) gfs VSD nA mA A –5 A W S V Dynamica Total Gate Charge Qg N Ch N-Channel l VDS = 10 V V, VGS = 10 V V, ID = 3.5 35A Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgs Qgd P-Channel VDS = –10 V, VGS = –10 V ID = –3.5 A td(on) tf trr IF = 3.5 A, di/dt = 100 A/ms nC C ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2 Document Number: 70146 S-00652—Rev. G, 27-Mar-00 Si9939DY Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 4V 16 I D – Drain Current (A) I D – Drain Current (A) 16 12 8 3V 4 12 8 TC = 125C 25C 4 2, 1 V –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1400 0.20 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 1200 0.16 0.12 VGS = 4.5 V 0.08 6V 1000 Coss 800 600 Ciss 400 0.04 10 V Crss 200 0 0 0 6 12 18 24 0 30 6 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge 10 12 2.0 On-Resistance vs. Junction Temperature 8 r DS(on) – On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) VGS = 10 V ID = 3.5 A VGS = 10 V ID = 3.5 A 6 4 2 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 70146 S-00652—Rev. G, 27-Mar-00 12 15 1.6 1.2 0.8 0.4 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 3 Si9939DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 20 r DS(on) – On-Resistance ( Ω ) TJ = 150C I S – Source Current (A) 10 TJ = 25C 0.3 0.2 ID = 3.5 A 0.1 0 1 0 0.8 0.4 1.2 0 1.6 VSD – Source-to-Drain Voltage (V) 2 4 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 40 0.4 0.2 32 ID = 250 mA –0.0 Power (W) V GS(th) – Variance (V) 6 –0.2 24 16 –0.4 8 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 4. Surface Mounted 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 4 Document Number: 70146 S-00652—Rev. G, 27-Mar-00 Si9939DY Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 6V 16 16 I D – Drain Current (A) I D – Drain Current (A) 5V 12 8 4V 4 12 8 TC = 125C 4 25C 2, 1 V –55C 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 4 5 6 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 0.6 0.5 1200 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 3 0.4 0.3 VGS = 4.5 V 0.2 6V 900 Coss 600 Ciss 300 0.1 Crss 10 V 0 0 0 4 8 12 16 0 20 Gate Charge 2.0 8 6 4 2 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 70146 S-00652—Rev. G, 27-Mar-00 18 24 30 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A r DS(on) – On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) VGS = 10 V ID = 3.5 A 0 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 10 6 12 15 1.6 1.2 0.8 0.4 0 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 5 Si9939DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) – On-Resistance ( Ω ) 20 I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.4 0.3 ID = 3.5 A 0.2 0.1 0 1 0.2 0.6 0.4 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 4 8 10 VGS – Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 40 0.8 0.6 32 0.4 Power (W) V GS(th) Variance (V) 6 ID = 250 µA 0.2 24 16 0.0 8 –0.2 0 –0.4 –50 0 50 100 150 0.01 1 0.1 10 30 Time (sec) TJ – Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 4. Surface Mounted 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 6 Document Number: 70146 S-00652—Rev. G, 27-Mar-00