SMD-Photodiode EPD-880-1-0.9-2 28.01.2008 rev. 05 Wavelength Type Technology Case Infrared SMD GaAs SMD 1206 Description all dimensions: mm all tolerances: ± 0,1 1,2 0,5 2 Selective photodiode with narrow bandwidth and high spectral sensitivity in the infrared range (810…950 nm). Compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays. pad 1,15 x 1,0 1,2 Applications R 0, 3 1,6 cathode 1,0 Alarm systems, light barriers, special sensors 3,2 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Active area Symbol Value Unit A 0.62 mm² Temperature coefficient of ID TCID 5 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 1 V ID 1.0 Peak sensitivity wavelength VR = 0 V λp 890 nm Responsivity at λP VR = 0 V Sλ 0.3 0.55 A/W VR = 0 V λmin, λmax 800 VR = 0 V ∆λ0.5 115 Shunt resistance VR = 10 mV RSH 205 Noise equivalent power λ = 880 nm NEP Specific detectivity λ = 880 nm D* 2.4x1012 cm ⋅ Hz ⋅ W −1 Junction capacitance VR = 0 V CJ 500 pF Switching time (RL = 50 Ω) VR = 1 V tr, tf 175 ns Breakdown voltage1) Sensitivity range at 10% 1) Spectral bandwidth at 50% 1) V 2.5 960 nA nm nm GΩ -14 W/ Hz 3.2x10 for information only Labeling Type Lot N° Typ. Sλ [A/W] Quantity EPD-880-1-0.9 *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 SMD-Photodiode EPD-880-1-0.9-2 28.01.2008 Typical spectral response [A/W] rev. 05 Relative Photocurrent vs. Temperature 0,6 1,30 UR = 5V TK = 0,25%/K 1,25 0,5 1,20 1,15 Relative Photocu rren t 0,4 0,3 0,2 0,1 1,10 1,05 1,00 0,95 0,90 0,85 0,0 0,80 -40 700 750 800 850 900 Wavelength [nm] 950 -20 0 1000 20 40 60 80 100 120 Temperature (°C) Dark Current vs. Temperature Short-circuit current vs. irradiance (typical) 2) 100 3 10 UR = 1V TK = 1,05 times/K 2 Short-circuit current [µA] Dark Current (pA) 10 1 10 1 10 0 10 -1 10 0,1 -2 -40 -20 0 20 40 Temperature (°C) 60 80 100 120 10 -2 10 -1 10 0 10 2 Irradiance [mW/cm ] 1 10 2 10 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545