EIC1414-8 14.0-14.5 GHz 8-Watt Internally Matched Power FET ISSUED 6/30/2006 FEATURES • • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics .060 MIN. EIC1414-8 .650±.008 .512 .319 GATE DRAIN .022 .045 .094 .382 .004 .129 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 14.0-14.5GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance3 .070 ±.008 MIN TYP MAX UNITS 38.5 39.0 dBm 4.0 5.0 dB ±0.6 dB 24 2300 2600 mA VDS = 3 V, VGS = 0 V 4000 5000 mA VDS = 3 V, IDS = 40 mA -2.5 -4.0 V 3.5 4.0 Note: 1) Tested with 100 Ohm gate resistor. f = 14.0-14.5GHz % 2) S.C.L. = Single Carrier Level. o C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 86.4mA 28.8mA Reverse Gate Current -14.4mA -4.8mA PARAMETERS Input Power 38.5dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 38W 38W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006