The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) 1215 50 50 150 20 43 -5 VSWR 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 100μs. DESCRIPTION The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.. ORDERING INFORMATION Device Part Number: HVV0912-150 Demo Kit Part Number: HVV0912-150-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08 1 innovative Semiconductor Company! HVV0912-150 HighThe Voltage, High Ruggedness HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle 960-1215 MHz, 10µs Pulse, 10% Duty Cycle L-Band Avionics Pulsed Power Transistor For Ground and Air DME, TCAS and IFF Applications For Ground and Air DME, TCAS and MHz, IFF 10μs Applications 960-1215 Pulse, 10% Duty Cycle % Duty For Ground and Air DME, TCAS and IFF Applications % Duty TM The Theinnovative innovativeSemiconductor SemiconductorCompany! Company! ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Symbol VSymbol BR(DSS) V BR(DSS) BR(DSS) IVDSS IIDSS DSS IGSS 1 IGGSS P 11 IGSS G P IRL1 GP 1 IRL ηD1 1 1 IRL 2 η D VGS(Q) 1 2 D η VGS(Q) VTH VGS(Q)2 VTH VTH Parameter Conditions Parameter Parameter Drain-Source Breakdown Conditions Conditions VGS=0V,ID=5mA Drain-Source Breakdown Drain-Source Drain LeakageBreakdown Current Drain Leakage Current Gate Leakage Leakage Current Drain Current Gate PowerLeakage Gain Current Gate Leakage Current Power Gain Input Return Loss Power Gain Input Loss Drain Return Efficiency Input Return Loss Drain Efficiency Gate Quiescent Voltage Drain Efficiency Gate Quiescent Voltage Threshold Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage Min VGS=0V,ID=5mA VGS=0V,ID=5mA VGS=0V,VDS=50V VGS=0V,VDS=50V VGS=5V,VDS=0V VGS=0V,VDS=50V VGS=5V,VDS=0V F=1215MHz VGS=5V,VDS=0V F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz VDD=50V,IDQ=50mA F=1215MHz VDD=50V,IDQ=50mA VDD=5V, ID=300µA VDD=50V,IDQ=50mA VDD=5V, ID=300µA VDD=5V, ID=300μA 95 18 41 1.1 0.7 Min Typical Typical Max Min Typical 95 102 95 102 - 102 50 -50 1 200 50 1 18 20 1 5 18 20 -5 20 -5 41 43 -5 -3.5 41 43 1.1 1.45 43 1.1 1.45 0.7 1.2 1.45 0.7 1.21.8 1.2 1.7 Max Unit Unit Max Unit V - V V 200 µA 200 5 μA µA µA 5µA dB - μA dB -3.5 dB dB dB -3.5 % - dB % 1.8 V 1.8 V 1.7 % V 1.7 V V V PULSE CHARACTERISTICS PULSE CHARACTERISTICS Pulse CHARACTERISTICS Symbol Parameter Symbol Parameter Symbol Parameter tr11 Rise Time Rise Time ttTrf11r Rise Time Fall Time 111 Fall Time tPD Fall Time Tf f Pulse Droop 1 PD Pulse Droop PD1 Pulse Droop Conditions Conditions Conditions F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz F=1215MHz Typical MinMin Typical Max Min - - -- - Typical <17 <17 <17 50 <27 <27 0.25 <27 50 0.25 0.25 0.5 Max Units Unit Max Units 50 nS nS nS 50 50 nS nS nS 50 0.5 dB 0.5 dB dB THERMAL PERFORMANCE THERMAL PERFORMANCE Thermal PERFORMANCE Symbol Symbol θJC1 θJC1 Parameter Parameter Thermal Resistance Thermal Resistance Max Max 0.13 0.13 Unit Unit °C/W °C/W RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE Symbol Symbol LMT1 LMT1 Parameter Parameter Load Load Mismatch Mismatch Tolerance Tolerance Test Condition Test Condition F = 1215 MHz F = 1215 MHz Max Max 20:1 20:1 Units Units VSWR VSWR The HVV0912-150 device is capable of withstanding an output load mismatch The HVV0912-150 device isdevice capable of an output load mismatch corresponding to amismatch 20:1 VSWR The HVV0912-150 iswithstanding capable withstanding outputoperating load corresponding to a 20:1 VSWR at rated of output power andan nominal voltage corresponding to a 20:1 VSWR at rated output power and nominal operating voltage at rated output power and nominal operating voltage across the frequency band of operation. across the frequency band of operation. across the frequency band of operation. NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10% 1.) NOTE: All parameters measured under conditions 150W output power point of the pulse with pulse width = 10μsec, dutypulsed cycle = 10% and VDDat = 50V, IDQ = 50mA in a broad1.) NOTE: All parameters measured under pulsed at 150W output measured attest the 10% point of the pulse with pulseconditions width = 10µsec, duty cyclepower = 10% band matched fixture. measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10% 2 and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. NOTE: Amount of gate required to attain nominal quiescent current. and VDD = 50V, IDQvoltage = 50mA in a broadband matched test fixture. 1 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. SuiteInc. 100 HVVi 10235 Semiconductors, S. 51stst St. Suite 100 Phoenix, AZ. 85044 St. Suite 100 10235 S. 51 Phoenix, Az. 85044 Phoenix, Az. 85044 ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or Certified visit www.hvvi.com ISO 9001:2000 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A EG-01-DS11A 12/11/08 EG-01-DS11A 12/12/08 2 12/12/08 2 2 The innovative Semiconductor Company! HVV0912-150 High Voltage,HVV0912-150 High Ruggedness High Voltage, High Ruggedness UHF Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFFand Applications For Ground Air DME, TCAS and IFF Applications % Duty TM Zo = 10 Ω The innovative Semiconductor Company! 1215MHz ZIN ZOUT* * 960MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000Inc. Certified © 2008 HVVi Semiconductors, All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/12/08 EG-01-DS11A 3 12/11/08 3 The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness HVV0912-150 High Voltage, High Ruggedness HVV0912-150 HighTransistor Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor UHF Pulsed Power 960-1215 MHz, 10μs Pulse, 10% Duty Cycle UHF Pulsed Power 960-1215 MHz, 10µsTransistor Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications 960-1215 MHz, Pulse,TCAS 10% DutyIFF Cycle For Ground and 10µs Air DME, and Applications For Ground and Air DME, TCAS and IFF Applications % Duty % Duty The The innovative Semiconductor Company! innovative Semiconductor Company! TM Demonstration Board Outline Demonstration Circuit Picture Demonstration Board Outline Demonstration CircuitBoard Board Picture (AutoCAD Files for Demonstration online atPart www.hvvi.com/products) Description Number Demonstration Board Outline Board available Demonstration Circuit BoardManufacturer Picture Part C1,C2,C13 : Part C14: C1,C2,C13 C15, C19: : C14: C16, C20: C15, C14: C19: C16, R1: C20: C14: R2: R1: C3: R2: C4, C5: C3: C6: C4, C5: C7, C9: C6: C8: C7, C10,C9: C11: C8: C12: C18: C11: C10, C15: C12: RF Connectors (2) C18: DC Drain Conn C15: DC Connectors Ground Conn. RF (2) DC Gate DC DrainConn. Conn PCBGround Board Conn. DC Heat SinkConn. DC Gate Device Clamp PCB Board S.S. Screws Heat Sink (3) Alloy Screws Device Clamp(4) Metal Washers(4) S.S. Screws (3) 39.0 pF ATC 100B Chip Capacitor Description 1.0 uF, 100V Chip Capacitor (X7R 1210) 39.0pFpF100V ATC Chi 100B Chip Capacitor 10K Capacitor (X7R 1206) 1.0pFuF, 100V Capacitor 1210) 1K 100V ChiChip Capacitor (X7R(X7R 1206) 10K 100V ChiChip Capacitor (X7R 1206) 47 pFpF ATC 100B Capacitor 1KOhms pF 100V Capacitor (X7R 1206) 10 ChipChi Resistor (1206) SMD 47 KpFOhms ATC 100B Chip Capacitor 1.0 Chip Resistor (1206) SMD 10 pF Ohms (1206) SMD 2.2 ATCChip 100BResistor Chip Capacitor 1.0pF K Ohms ChipChip Resistor (1206) SMD 2.0 ATC 100B Capacitor 2.2pF pFATC ATC100B 100BChip ChipCapacitor Capacitor 2.7 2.0pF pFATC ATC100B 100BChip ChipCapacitor Capacitor 1.0 2.7pF pFATC ATC100B 100BChip ChipCapacitor Capacitor 1.8 1.0pF pFATC ATC100B 100BChip ChipCapacitor Capacitor 3.3 1.8 pF Capacitor 15.0 pF ATC ATC 100B Chip Capacitor 10uF 63V Elect FK Chip SMDCapacitor 3.3 pF ATC 100B 220uF 63V Elect FKChip SMDCapacitor 15.0 pF ATC 100B Type connectors 10uF"N" 63VRFElect FK SMD Connector Banana Nylon Red 220uF 63VJack Elect FK SMD Connector Jack Banana Nylon Black Type "N" RF connectors Connector ConnectorJack JackBanana BananaNylon NylonGreen Red PCB: Arlon, 30 mils thick, Nylon 2.55 Dielectric, 2 oz Copper Connector Jack Banana Black Cool Innovations Aluminum Heat Sink Connector Jack Banana Nylon Green Cool Nylon Clamp PCB:Innovations Arlon, 30 mils thick, 2.55Foot Dielectric, 2 oz Copper 4-40 1/4 Stainless Steel HexHeat HeadSink Socket Screws CoolXInnovations Aluminum 4-40 1/2 Alloy Socket screw Hex Head CoolXInnovations NylonCap Clamp Foot #4 Washer PLTD Steel 4-40 X 1/4Zinc Stainless SteelLock Hex Head Socket Screws Metal Washers(4) #4 Washer Zinc PLTD Steel Lock 100B390JP500X Part Number GRM32ER72A105MA01L 100B390JP500X C1206C103K1RACTU GRM32ER72A105MA01L C1206C102K1RACTU C1206C103K1RACTU 100B470JP500X C1206C102K1RACTU RC1206JR-07100KL 100B470JP500X RC1206JR-07102KL RC1206JR-07100KL 100B2R2JP500X RC1206JR-07102KL 100B2R0JP500X 100B2R2JP500X 100B2R7JP500X 100B2R0JP500X 100B1R0JP500X 100B2R7JP500X 100B1R8JP500X 100B1R0JP500X 100B3R3JP500X 100B1R8JP500X 100B150JP500X EEV-FK1J100P 100B3R3JP500X EEV-FK1J221Q 100B150JP500X 5919CC-TB-7 EEV-FK1J100P J151-ND EEV-FK1J221Q J152-ND 5919CC-TB-7 J153-ND J151-ND DS2346 J152-ND 3-252510RS3411 J153-ND FXT000158 DS2346 Rv.B P242393 3-252510RS3411 SCAS-0440-08C FXT000158 Rv.B ZSLW-004-M P242393 ATC Manufacturer Murata ATC Kemet Murata Kemet ATCKemet Kemet DIGI-KEY ATC DIGI-KEY ATCDIGI-KEY ATCDIGI-KEY ATCATC ATCATC ATCATC ATCATC ATCATC Panasonic ATC Panasonic ATC Coaxicom Panasonic DIGI-KEY Panasonic DIGI-KEY Coaxicom DIGI-KEY DIGI-KEY DS Electronics DIGI-KEY CoolDIGI-KEY Innovation CoolDS Innovation Electronics Copper State Bolt Cool Innovation Small Parts Inc Cool Innovation Small Parts Inc Copper State Bolt (AutoCAD Files for Demonstration Board available SCAS-0440-08C Small Parts Inc Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head online at www.hvvi.com/products) ZSLW-004-M Small Parts Inc HVV0912-150 Demonstration Circuitonline BoardatBill of Materials (AutoCAD Files for Demonstration Board available www.hvvi.com/products) HVV1012-250 Demonstration Circuit Board Bill of Materials HVV0912-150 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 10235 S. 51st Suite 100 Phoenix, Az.St. 85044 HVVi Semiconductors, Inc. Phoenix, AZ. 85044 st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Certified ISO 9001:2000 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel: (866)HVVi 429-HVVi (4884) or visit www.hvvi.com © 2008 Semiconductors, Inc. All Rights Reserved. ISO 9001:2000Inc. Certified © 2008 HVVi Semiconductors, All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A EG-01-DS11A 12/12/08 12/11/08 4 EG-01-DS11A 4 12/12/08 4 The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness Avionics Pulsed Power Transistor HVV0912-150 High Voltage,L-Band High Ruggedness 960-1215 MHz, 10μs Pulse, 10% Duty Cycle UHF Pulsed Power TransistorFor Ground and Air DME, TCAS and IFF Applications 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For PACKAGE Ground and Air DME, TCAS and IFF Applications DIMENSIONS %PACKAGE Duty DIMENSIONS TM DRAIN GATE The innovative Semiconductor Company! SOURCE Drawing Note: Drawing is notNote: actual size. is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use ofHVVi suchSemiconductors, information. Use of HVVi productsISO as 9001:2000 critical components Certified in life support systems is not EG-01-DS11A Inc. authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suite 100 rights, including any patent rights. The HVVi name and logo trademarks © 2008 HVVi Semiconductors, Inc. Allare Rights Reserved.of HVVi Semiconductors, 5 Phoenix, AZ. 85044 Inc.