HVV1214-140 (Preliminary Datasheet)

REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200
Specifications are subject to change without notice.
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HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
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For Ground Based Radar Applications
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The innovative Semiconductor Company!
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ABSOLUTE MAXIMUM RATING (IEC 134)
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THERMAL/RUGGEDNESS PERFORMANCE
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The HVV1214-140 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at
rated output power and nominal operating voltage across the frequency band of operation.
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ELECTRICAL CHARACTERISTICS
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PULSE CHARACTERISTICS
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Notes:
1) Rated at TCASE = 25°C
2) All parameters measured under pulsed conditions at 140W output power measured at the 10% point of the pulse with
pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
3) Amount of gate voltage required to attain nominal quiescent current.
4) Guaranteed by design.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO22X1
1/5/10
2
The innovative Semiconductor Company!
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
For Ground Based Radar Applications
Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width
and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz.
!!!!!!!!!!!!
Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO22X1
1/5/10
3
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
!
For Ground Based Radar Applications
!
The innovative Semiconductor Company!
!
!!!!!!!!!!!!
!
Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W.
!
!!!!!!!!!!!!
!
Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO22X1
1/5/10
4
The innovative Semiconductor Company!
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
For Ground Based Radar Applications
Typical device performance under Class AB mode of operation at 1400MHz and pulse conditions of 200µs pulse
width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows
less than 1.6dB of power degradation over an extreme case temperature rise of 125°C.
!
HVV1214-140 Performance over Temperature
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO22X1
1/5/10
5
The innovative Semiconductor Company!
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
For Ground Based Radar Applications
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!!
!
!!!!!
Zo = 10 ȍ
ZIN*
1030MHz
ZOUT*
1030MHz
Test Circuit Impedances
Frequency
Zin* (ohms)
Zout* (ohms)
1200MHz
1.7-j4.1
4.5-j7.6
1250MHz
1.6-j3.4
4.1-j6.7
1300MHz
1.5-j2.9
3.9-j6.0
1350MHz
1.3-j2.4
3.6-j5.2
1400MHz
1.2-j1.8
3.4-j4.5
Zin*
Zout*
Input
Output
Impedance
Matching Network
Impedance
Matching Network
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO22X1
1/5/10
6
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
For Ground Based Radar Applications
Demonstration Board Outline
Part
C1, C2:
C3:
C4:
C5:
C6:
C7:
C8,C9:
C10,C12:
C11,C13:
C14:
C15, C16:
R1:
R2:
RF Connectors
DC Drain Conn
DC Ground Conn.
DC Gate Conn.
PCB Board
Device Clamp
Heat Sink
S.S. Screws (4)
Alloy Screws (4)
Metal Washer (6)
Alloy Screws (2)
Example of a Demonstration Circuit
Description
100 pF ATC 100B Chip Capacitor
2.4 pF ATC 100B Chip Capacitor
1.2 Pf ATC 100B Chip Capacitor
3.9 pF ATC 100B Chip Capacitor
2.4 pF ATC 100B Chip Capacitor
15 pF ATC 100B Chip Capacitor
47 pf ATC 100B Chip Capacitor
1K pF 100V Chip Capacitor (X7R 1206)
10K pF 100V Chip Capacitor (X7R 1206)
10 uF 63V Elect FK SMD
100 uF 63V Elect FK SMD
10 Ohms Chip Resistor (1206)
1 K Ohms Chip Resistor (1206)
Type "N" RF connectors
Connector Jack Banana Nylon Red
Connector Jack Banana Nylon Black
Connector Jack Banana Nylon Green
PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper
Part Number
100B101JP500X
100B2R4JP500X
100B1R2JP500X
100B3R9JP500X
100B2R4JP500X
100B150JP500X
100B470JP500X
C1206C102K1RACTU
C1206C103K1RACTU
PCE3479CT-ND
PCE3483CT-ND
ERJ8GEYJ100V
ERJ8GEYJ102V
5919CC-TB-7
J151-ND
J152-ND
J153-ND
Cool Innovation Nylon Clamp Foot
Cool Innovations Aluminum Heat Sink
FXT000158
3-252510RS3394
P242393
SCAS-0440-08C
ZSLW-004-M
SCAS-0440-12M
4-40 X 1/4 Stainless Steel Socket Hex Head
4-40 X 1/2 Alloy Socket Cap screw Hex Head
#4 Washer Zinc PLTD Steel Lock
4-40 X 3/4 Alloy Socket Cap Screw Head
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Kemet
Kemet
DIGI-KEY
DIGI-KEY
Panasonic
Panasonic
Coaxicom
DIGI-KEY
DIGI-KEY
DIGI-KEY
DS Electronics
Cool Innovation
Cool Innovation
Copper State Bolt
Small Parts Inc
Small Parts Inc
Small Parts Inc
HVV11214-100 Demonstration Circuit Board Bill of Materials
PACKAGE DIMENSIONS
DRAIN
GATE
ASI
PART NUMBER
JDATE CODE
inches
mm
SOURCE
Note: Drawing is not actual size.
ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, ASI does not give any representations or warranties, either express or implied, as
to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed
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