ETC ASG402

ASG402
DC-3000 MHz
Features
Description
·SiGe Technology
·16 dB Gain at 900 MHz
·+29 dBm P1dB
·+45 dBm Output IP3
·3.3 dB Noise Figure
·ACPR= [email protected]
·ACLR= [email protected]
·Single +8 V Supply
·SOT-89 Surface Mount Package
The ASG402 is designed for high linearity, high
SiGe HBT Amplifier
gain, and low noise over a wide range of frequency, being suitable for use in both receiver
and transmitter of wireless and wireline telecommunication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in
Package Style: SOT-89
a low cost SOT-89 package completing stringent
DC and RF tests.
Specifications 1)
Parameters
Units
Frequency Range
Gain
Input VSWR
Output VSWR
Output IP3
Min.
Typ.
250 - 2500
dB
16
-
1.44
·Power Amplifier
1.44
·Gain Block
dBm
44
·CATV Amplifier
·IF Amplifier
dB
3.3
Output P1dB
dBm
29
Supply Current
mA
Supply Voltage
V
8
°C/W
24.1
4)
260
·CDMA, GSM, W-CDMA, PCS
45
Noise Figure
Thermal Resistance, Rth
Applications
MHz
-
2)
Max.
275
290
1) Measurement conditions are as follows: T = 25°C, Vs = 6 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 1.65 W (VCC=6 V, IC=275 mA) with RF signal and a lead temperature
of 50.8 °C.
More Information
Absolute Maximum Ratings
Parameters
Rating
Operating device voltage
Remarks
7V
RF input power (continuous)
+2 dB above Input P1dB
Supply current
300 mA
Operating case temperature
-40 to + 85°C
Storage temperature
-40 to + 150°C
Website: www.asb.co.kr
E-mail: [email protected]
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
Application Note
Application circuit for 900 MHz
Application circuit for 2 GHz
Ordering Information
Part Number
Description
EB-ASG402-900
High linearity medium power amplifier
(Available in tape and reel)
Fully assembled evaluation kit (900 MHz)
EB-ASG402-2000
Fully assembled evaluation kit (2000 MHz)
ASG402
1/7
www.ASB.co.kr
Mar.. 2004
ASG402
Outline Drawing
(Unit: mm)
3
a
2
2
1
Pin Description
Function
Pin No.
Input
1
Ground
2
Output
3
Land Pattern
Mounting Configuration
(Unit: mm)
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.
2/7
www.ASB.co.kr
Mar.. 2004
ASG402
Application Circuit: 900 MHz
Typical Performance
Schematic
Frequency
900 MHz
Magnitude S21
16 dB
Magnitude S11
1)
-15 dB
Magnitude S22
1)
-15 dB
R3=300 Ω
Output P1dB
29 dBm
2)
45 dBm
Output IP3
C6=
C7=
100 pF 1000 pF
R1=7.5 Ω
Vs= 8V
R2=1.2 kΩ
C5=1 µF
L2=10 nH
L1=470 nH
C3=100 pF
C1=10 pF
Noise Figure
3.3 dB
Device Operating Voltage
6V
Current
275 mA
Supply Voltage
8V
C8=
1 µF
50 Ω
RF IN
L3=33 nH
50 Ω
ASG402
RF OUT
9 mm
4.5 mm
C2= 8 pF
C4=4.7 pF
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +14 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Gain vs. Temperature
20
19
Gain ( dB )
18
Frequency = 900MHz
17
16
15
14
13
12
-60
-40
-20
0
20
40
60
80
100
o
Temperature ( C )
S-parameters
0
-15
o
-20
o
+ 85 C
o
+ 25 C
o
- 40 C
-10
-15
-20
S12 ( dB )
S11 ( dB )
-5
+ 85 C
o
+ 25 C
o
- 40 C
-25
-30
-35
-25
600
700
800
900
1000
Frequency ( MHz )
3/7
1100
1200
-40
600
700
800
900
1000
1100
Frequency ( MHz )
www.ASB.co.kr
Mar.. 2004
1200
ASG402
25
10
o
+ 85 C
o
+ 25 C
o
- 40 C
0
15
S22 ( dB )
S21 ( dB )
20
10
5
-10
o
+ 85 C
o
+ 25 C
o
- 40 C
-20
-30
0
600
700
800
900
1000
1100
-40
600
1200
700
800
Frequency ( MHz )
900
1000
1100
ACPR vs. Channel Power
( Offset = 750kHz)
OP1 vs. Frequency
36
30
o
+ 85 C
o
+ 25 C
o
- 40 C
o
+ 85 C
o
+ 25 C
o
- 40 C
34
32
40
ACPR ( dBc )
Output P1dB ( dBm )
1200
Frequency ( MHz )
30
28
26
50
60
24
70
22
20
800
850
900
950
80
12
1000
14
Frequency ( MHz )
18
20
22
Channel Output Power ( dBm )
IS-95, 9 Channels Forward
Output IP3 vs. Frequency
( Pout per tone = 14dBm )
Output IP3 vs. Tone Power
55
55
o
45
40
o
+ 85 C
o
+ 25 C
o
- 40 C
Frequency = 900 MHz
50
Output IP3 ( dBm )
+ 85 C
o
+ 25 C
o
- 40 C
50
Output IP3 ( dBm )
16
45
40
35
35
30
800
850
900
Frequency ( MHz )
4/7
950
1000
30
12
14
16
18
20
Pout per tone ( dBm )
www.ASB.co.kr
Mar.. 2004
22
ASG402
Application Circuit: 2000 MHz
Typical Performance
Schematic
Frequency
2000 MHz
Magnitude S21
9 dB
Magnitude S11
1)
-15dB
Magnitude S22
1)
-14 dB
Output P1dB
28 dBm
2)
44 dBm
Output IP3
Noise Figure
5.0 dB
Device Operating Voltage
6V
Current
275 mA
Supply Voltage
8V
C6=
C7=
C8=
100 pF 1000 pF 1 µF
R1=7.5 Ω
Vs=8 V
R2=1.2 kΩ
R3=300 Ω
L2= 6.8 nH
C5=1 µF
L1= 100 nH
C1= 1.0 pF
C3=100 pF
50 Ω
RF IN
ASG402
4.5 mm
L3=33 nH
50 Ω
RF OUT
4.5 mm
C2=1.8 pF
C4=2.2 pF
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +14 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Gain vs. Temperature
13
12
Frequency = 2GHz
Gain ( dB )
11
10
9
8
7
6
5
-60
-40
-20
0
20
40
60
80
100
o
Temperature ( C )
S-parameters
0
-5
-10
-10
-20
S12 ( dB )
S11 ( dB )
o
o
+ 85 C
o
+ 25 C
o
- 40 C
-30
-40
+ 85 C
o
+ 25 C
o
- 40 C
-15
-20
-25
-50
1700
1800
1900
2000
2100
Frequency ( MHz )
5/7
2200
2300
-30
1700
1800
1900
2000
2100
2200
Frequency ( MHz )
www.ASB.co.kr
Mar.. 2004
2300
ASG402
20
0
o
+ 85 C
o
+ 25 C
o
- 40 C
o
+ 85 C
o
+ 25 C
o
- 40 C
-5
10
S22 ( dB )
S21 ( dB )
15
5
0
-10
-15
-20
-5
1700
1800
1900
2000
2100
2200
-25
1700
2300
1800
Frequency ( MHz )
1900
2000
2100
2200
2300
Frequency ( MHz )
ACPR vs. Channel Power
( Offset = 750 kHz )
OP1 vs. Frequency
36
30
o
+ 85 C
o
+ 25 C
o
- 40 C
32
o
30
28
26
+ 85 C
o
+ 25 C
o
- 40 C
40
ACPR ( dBc )
Output P1dB ( dBm )
34
50
60
24
70
22
20
1800
1850
1900
1950
2000
2050
80
12
2100
14
Frequency ( MHz )
18
20
22
Channel Output Power ( dBm )
IS-95, 9 Channels Forward
Output IP3 vs. Frequency
Output IP3 vs. Tone Power
( Pout per tone = 14 dBm )
55
55
o
+ 85 C
o
+ 25 C
o
- 40 C
o
+ 85 C
o
+ 25 C
o
- 40 C
Frequency = 2 GHz
50
Output IP3 ( dBm )
50
Output IP3 ( dBm )
16
45
40
35
45
40
35
30
1800
1850
1900
1950
2000
Frequency ( MHz )
6/7
2050
2100
30
12
14
16
18
20
Pout per tone ( dBm )
www.ASB.co.kr
Mar.. 2004
22
ASG402
W-CDMA ACLR vs. Channel Power
(3GPP W-CDMA, Test Model 1+64 DPCH, E5MHz offset)
-40
-45
ACLR ( dBc )
Frequency = 2GHz
o
+ 85 C
o
+ 25 C
o
- 40 C
-50
-55
-60
-65
-70
10
12
14
16
18
20
22
24
Output Channel Power ( dBm )
7/7
www.ASB.co.kr
Mar.. 2004