STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω 0.3A 3.3W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ ESD improved capability ■ New high voltage benchmark TO-92 (Ammopak) TO-92 2 1 2 3 SOT-223 Description 3 2 1 IPAK Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Sales Type Marking Package Packaging STD1LNK60Z-1 D1LNK60Z IPAK TUBE STQ1NK60ZR Q1NK60ZR TO-92 BULK STQ1NK60ZR-AP Q1NK60ZR TO-92 AMMOPAK STN1NK60Z 1NK60Z SOT-223 TAPE & REEL February 2006 Rev 7 1/14 www.st.com 14 Electrical ratings 1 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit IPAK VDS TO-92 SOT-223 Drain-Source Voltage (V GS = 0) 600 V VDGR Drain-Gate Voltage (RGS = 20KΩ) 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at T C = 25°C 0.8 ID Drain Current (continuous) at T C=100°C 0.5 0.189 A Drain Current (pulsed) 3.2 1.2 A Total Dissipation at T C = 25°C 25 3 3.3 W 0.24 0.25 0.26 W/°C IDM (1) PTOT Derating Factor VESD(G-D) dv/dt(2) TJ Tstg 0.3 0.3 A Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V Peak Diode Recovery voltage slope 4.5 V/ns -55 to 150 °C Operating Junction Temperature Storage Temperature 1. Pulse width limited by safe operating area 2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Table 2. Thermal resistance Value Symbol Rthj-case Rthj-a Rthj-lead Tl Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max Maximum lead temperature for soldering purpose Unit IPAK TO-92 SOT-223 5 -- -- °C/W 100 120 37.87(1) °C/W -- 40 -- °C/W 275 260 °C Value Unit 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu Table 3. Symbol 2/14 Avalanche data Parameter IAR Avalanche Curent, Repetitive or Noy-Repetitive (pulse width limited by Tj Max) 0.8 A EAS Single pulse avalanche Energy (starting Tj=25°C, Id=Iar, Vdd=50V) 60 mJ Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test Condictions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current VGS = ±20V (VDS = 0) ID = 1mA, VGS= 0 Typ. VDS= V GS, ID = 50µA RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 0.4A 3 Unit V 1 50 µA µA ±10 µA 3.75 4..5 V 13 15 Ω Typ. Max. Unit VDS = MaxRating @125°C Gate Threshold Voltage Max. 600 VDS = Max Rating, VGS(th) Table 5. Min. Dynamic Symbol Parameter gfs (1) Forward Transconductance VDS =15V, ID = 0.4A 0.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, V GS=0 94 17.6 2.8 pF pF pF VGS=0, V DS =0V to 480V 11 pF VDD=480V, ID = 0.8A 4.9 1 2.7 Ciss Coss Crss Coss eq(2). Equivalent Output Capacitance Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Condictions VGS =10V (see Figure 11) Min. 6.9 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS inceases from 0 to 80% VDSS Rev 7 3/14 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Switching times Parameter Test Condictions Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min. Typ. Max. Unit 5.5 5 13 28 VDD =300 V, ID= 0.4A, RG=4.7Ω, VGS=10V (see Figure 19) ns ns ns ns Source drain diode Max Unit Source-drain Current 0.8 A ISDM(1) Source-drain Current (pulsed) 2.4 A VSD(2) Forward on Voltage ISD=0.8A, VGS=0 1.6 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=0.8A, Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=0.8A, ISD trr Qrr IRRM trr Qrr IRRM Parameter Test Condictions Min di/dt = 100A/µs, VDD =20V, Tj=25°C di/dt = 100A/µs, VDD =20V, Tj=150°C Typ. 135 216 3.2 ns nC A 140 224 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 8. Symbol BVGSO(1) 1. 4/14 Gate-source zener diode Parameter Gate-source Braekdown Voltage Test Condictions Igs=±1mA (Open Drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for IPAK Figure 2. Thermal impedance for IPAK Figure 3. Safe operating area for TO-92 Figure 4. Thermal impedance for TO-92 Figure 5. Safe operating area for SOT-223 Figure 6. Thermal impedance for SOT-223 Rev 7 5/14 Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 6/14 Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Electrical characteristics Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature Figure 17. Maximum avalanche energy vs temperature Figure 18. Max Id Current vs Tc Rev 7 7/14 Test circuit 3 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Test circuit Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform 8/14 Figure 24. Switching time waveform Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com Rev 7 9/14 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z TO-92 MECHANICAL DATA mm. inch DIM. MIN. MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 0.055 e1 1.14 1.40 0.044 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 V 10/14 TYP 5° 0.022 5° Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E Rev 7 11/14 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 12/14 Rev 7 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z 5 Revision history Revision history Table 9. Revision history Date Revision Changes 19-Mar-2003 1 First Release 15-May-2003 2 Removed DPAK 09-Jun-2003 3 Final datasheet 17-Nov-2004 4 Inserted SOT-223 15-Feb-2005 5 Modified Figure 3. 07-Sep-2005 6 Inserted ecopak indication 22-Feb-2006 7 New template Rev 7 13/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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