ISC 2SB1272

Inchange Semiconductor
Product Specification
2SB1272
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter -base voltage
Open collector
-7
V
-2
A
10
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1272
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA;IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA;IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-2mA
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-2mA
-2.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE=100V; IB=0
-0.5
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-5.0
mA
hFE
DC current gain
IC=-1A ; VCE=-2V
B
2
MIN
1000
TYP.
MAX
10000
UNIT
Inchange Semiconductor
Product Specification
2SB1272
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3