Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER VALUE UNIT -130 V -80 V -7 V Collector current -5 A ICM Collector current-peak -10 A PC Collector power dissipation VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC D N O IC Open emitter M E S GE N A H C IN CONDITIONS Open base Open collector Ta=25℃ 2 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-4A, IB=-0.2A -0.5 V VBEsat Base-emitter saturation voltage IC=-4A, IB=-0.2A -1.5 V IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-2A ; VCE=-2V 90 Transition frequency IC=-0.5A; VCE=-10V,f=10MHz fT CONDITIONS 导体 半 电 MIN tstg 固 Turn-on time Storage time tf M E S GE N A H INC Fall time hFE-2 Classifications Q 90-180 P 130-260 2 UNIT V 260 30 R O T UC D N O IC IC=-2A;IB1=-0.2A ,IB2=0.2A MAX -80 Switching times ton TYP. MHz 0.13 μs 0.5 μs 0.13 μs Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4