ISC 2SB867

Inchange Semiconductor
Product Specification
2SB867
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Complement to type 2SD959
・Excellent linearity of hFE
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-3
A
ICM
Collector current -peak
-6
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB867
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IE=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-0.5A ; VCE=-2V
60
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
260
30
MHz
0.3
μs
1.1
μs
0.3
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-0.5A
IB1=-IB2=-50mA
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
Inchange Semiconductor
Product Specification
2SB867
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SB867
Silicon PNP Power Transistors
4
Inchange Semiconductor
Product Specification
2SB867
Silicon PNP Power Transistors
5