ISC 2SC1114

Inchange Semiconductor
Product Specification
2SC1114
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
325
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
4
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1114
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ; IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
325
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=325V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=4V
20
Transition frequency
IC=0.5A ; VCE=12V
10
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC1114
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3