ISC 2SC2809

Inchange Semiconductor
Product Specification
2SC2809
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-Peak
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2809
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
V(BR)CBO
Emitter-base breakdown voltage
IC=1mA ;IE=0
300
V
VCE(sat)
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=300V IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=0.3A ; VCE=4V
Transition frequency
IC=0.3A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
20
MHz
Inchange Semiconductor
Product Specification
2SC2809
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3