Inchange Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA1249 ・High breakdown voltage ・Large current capacity APPLICATIONS ・Color TV sound output;converters; Inverters’ applications ・160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 180 V Collector-emitter voltage Open base 160 V Emitter-base voltage Open collector 6 V INC IC Collector current 1.5 A ICM Collector current-peak 2.5 A PC Collector power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞ 160 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 0.13 0.45 V VBEsat Base-emitter saturation voltage IC=500mA; IB=50mA 0.85 1.2 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE-1 DC current gain IC=100mA ; VCE=5V hFE-2 DC current gain fT 固电 Cob 体 导 半 A H C IN S T 100-200 140-280 200-400 TYP. MAX UNIT R O T UC 100 400 90 IC=50mA ; VCE=10V 120 MHz IE=0 ; VCB=10V;f=1MHz 22 pF hFE-1 Classifications R MIN D N O IC IC=10mA ; VCE=5V EM S E NG Transition frequency Output capacitance CONDITIONS 2 Inchange Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC