ISC 2SC4075

Inchange Semiconductor
Product Specification
2SC4075
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220F package
·High voltage
·Wide area of safe operation
APPLICATIONS
·Color TV chroma output ,sound output
and B/W TV video output ,audio output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
0.2
A
ICM
Collector current-peak
0.7
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4075
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=10μA; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ; IC=0
7
V
Collector-emitter saturation voltage
IC=50mA; IB=5m A
2.0
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
μA
hFE
DC current gain
IC=10mA ; VCE=10V
40
fT
Transition frequency
IC=10mA ; VCE=30V
50
COB
Output capacitance
IE=0; VCB=50V;f=1MHz
VCEsat
‹
CONDITIONS
hFE Classifications
C
D
E
40-80
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
MHz
5.3
pF
Inchange Semiconductor
Product Specification
2SC4075
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3