ISC 2SD2053

Inchange Semiconductor
Product Specification
2SD2053
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Wide area of safe operation
・Complement to type 2SB1362
APPLICATIONS
・For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
9
A
ICP
Collector current (Pulse)
15
A
PC
Collector power dissipation
Ta=25℃
2.5
W
TC=25℃
100
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2053
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=0.7A
2.0
V
VBE
Base-emitter on voltage
IC=7A;VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=150V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
60
hFE-3
DC current gain
IC=7A ; VCE=5V
15
Transition frequency
IC=0.5A ; VCE=5V
20
MHz
Collector output capacitance
f=1MHz;VCB=10V
150
pF
fT
COB
‹
CONDITIONS
hFE-2 Classifications
Q
P
60-120
100-200
2
MIN
TYP.
MAX
150
UNIT
V
200
Inchange Semiconductor
Product Specification
2SD2053
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3