isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3124 DESCRIPTION ·High Gain Bandwidth Product fT= 1100 MHz TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3124 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE DC Current Gain IC= 8mA ; VCE= 3V 40 Current-Gain—Bandwidth Product IC= 8mA ; VCE= 10V 650 Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz Base Time Constant VCB= 10V,IC= 8 mA, f= 30 MHz fT COB rbb’ • CC isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 15 UNIT V 200 1100 MHz 0.9 1.3 pF 7 12 ps INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3124 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC3124 4