Inchange Semiconductor Product Specification 2SD1391 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 17 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1391 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 2.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1.0 mA ICBO hFE tf CONDITIONS MIN TYP. MAX UNIT 700 V 6 V Collector cut-off current DC current gain IC=3A ; VCE=10V Fall time 4 15 1.0 μs 11 μs IC=4A IBend=1.5A,LB=10μH ts Storage time 2 Inchange Semiconductor Product Specification 2SD1391 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3