ISC 2SD1497

Inchange Semiconductor
Product Specification
2SD1497
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-peak
7
A
IC(surge)
Collector surge current
16
A
50
W
TC=25℃
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
Inchange Semiconductor
Product Specification
2SD1497
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=∞
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICEX
Collector cut-off current
VCE=1500V; VBE=1.5V
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
10
hFE-2
DC current gain
IC=5A ; VCE=5V
5
Fall time
ICP=4A;IB1=1.3A; LB=0
tf
2
7
V
600
V
30
2.0
μs
Inchange Semiconductor
Product Specification
2SD1497
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3