isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 375V(Min) ·High Switching Speed APPLICATIONS Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT s c s i . w VCES Collector-Emitter Voltage(VBE= 0) 800 V VCEO Collector-Emitter Voltage 375 V VEBO Emitter-Base Voltage 8 V w w IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current 0.5 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn BU826 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU826 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.2 V ICES Collector Cutoff Current VCE= RatedVCES; RBE= 0 VCE= RatedVCES; RBE= 0,TC= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current 150 mA 1.6 μs 3.1 μs 1.2 μs w w ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn VEB= 8V; IC= 0 n c . i m e VCC= 250V, IC= 2.5A, IB1= 55mA, IB2= -1A; tp= 20μs; Duty Cycle≤ 1% 2 TYP. MAX 375 B s c s i . w Switching Times MIN UNIT V