isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 3.125 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4242 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V ICBO Collector Cutoff Current VCB= 450V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA hFE DC Current Gain IC= 4A ; VCE= 5V 1.0 μs 2.5 μs 0.5 μs B B TYP. MAX UNIT 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A , IB1= -IB2=1A RL= 30Ω; VCC= 150V Fall Time isc Website：www.iscsemi.cn 2