isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min) ·High Switching Speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage VALUE s c s .i ww w 900 V 900 V 800 V 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A Base Current-Continuous 0.3 A Collector Power Dissipation @ TC=25℃ 40 IB B PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn n c . i m e UNIT 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4960 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.2A; IB= 40mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.2A; IB= 40mA 1.0 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 50mA; VCE= 5V hFE-2 DC Current Gain m e s isc fT Turn-On Time tstg Storage Time tf . w w w ton MAX UNIT V 6 n c . i IC= 0.2A; IB1= 40mA, IB2= -80mA; VCC= 250V 2 TYP. 800 IC= 50mA; VCE= 10V; f= 1MHz Fall Time isc Website：www.iscsemi.cn MIN B IC= 0.5A; VCE= 5V Current-Gain—Bandwidth Product Switching times CONDITIONS 3 4 MHz 1.0 μs 3.0 μs 1.0 μs