Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5621 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5623/5625 Open emitter 80 2N5627 100 2N5621 80 2N5623/5625 Emitter-base voltage UNIT 60 Open base 2N5627 VEBO VALUE 100 V V 120 Open collector 5 V 10 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5621 VCEO Collector-emitter sustaining voltage 2N5623/5625 TYP. MAX UNIT 60 IC=50mA ;IB=0 V 80 100 2N5627 VCEsat MIN Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain 2N5621/5625 fT 70 200 2N5623/5627 30 90 2N5621/5625 40 IC=5A ; VCE=5V Transition frequency IC=1A ; VCE=12V 2N5623/5627 MHz 30 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 PACKAGE OUTLINE Fig.2 outline dimensions JMnic