JMnic Product Specification 2N6537 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-Peak 15 A IB Base current 0.25 A PT Total power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2N6537 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V VBE-1 Base -emitter on voltage IC=3A ; VCE=3V 2.8 V VBE-2 Base -emitter on voltage IC=8A ; VCE=3V 4.5 V ICEV Collector cut-off current VCE=120V; VBE=-1.5V TC=125℃ 0.5 5.0 mA ICEO Collector cut-off current VCE=120V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 1000 10000 hFE-2 DC current gain IC=8A ; VCE=3V 100 5000 Diode forward voltage IF=5A VF CONDITIONS MIN TYP. MAX 120 V 4.0 2 UNIT V JMnic Product Specification 2N6537 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3