Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 150 VCEO Collector-emitter voltage Open base 100 VEBO Emitter-base voltage Open collector IC 7 V Collector current (DC) 10 A ICM Collector current-Peak 15 A IB Base current (DC) 0.5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=25mA 1.5 V VBEsat Emitter-base saturation voltage IC=10A; IB=25mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA ICEO Collector cut-off current VCE=100V; IE=0 500 μA IEBO Emitter cut-off current VEB=7V ;IC=0 5 mA hFE DC current gain IC=10A ; VCE=2V JMnic 100 UNIT 1000 V 30000 Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic