JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895 APPLICATIONS ・Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -8 V IC Collector current -15 A ICP Collector current-peak -12 A PC Collector power dissipation TC=25℃ 100 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1255 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter voltage IC=-30mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA ICEO Collector cut-off current VCE=-140V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 2000 hFE -2 DC current gain IC=-7A ; VCE=-5V 5000 Transition frequency IC=0.5A ; VCE=-10V;f=1MHz fT -140 UNIT V 30000 20 MHz 1.0 μs 1.5 μs 1.2 μs Switching times ton Turn-on time tstg Storage time tf IC=-7A; VCC=-50V IB1=-IB2=-7mA Fall time hFE-2 classifications Q P 5000-15000 8000-30000 2 JMnic Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SB1255