JMnic Product Specification 2SB794 2SB795 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB794 VCBO Collector-base voltage -60 Open base 2SB795 VEBO Emitter-base voltage IC V -80 2SB794 Collector-emitter voltage UNIT -60 Open emitter 2SB795 VCEO VALUE V -80 Open collector -8 V Collector current (DC) -1.5 A ICM Collector current-peak -3.0 A PD Total power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB794 2SB795 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB794 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -60 IC=-10mA ;IB=0 2SB795 V -80 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V -1.0 μA -2.0 mA 2SB794 ICBO VCB=-60V; IE=0 Collector cut-off current 2SB795 VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 1000 hFE-2 DC current gain IC=-1A ; VCE=-2V 2000 30000 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50Ω Fall time hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 2 0.5 μs 1.0 μs 1.0 μs JMnic Product Specification 2SB794 2SB795 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3