JMNIC 2SB1381

JMnic
Product Specification
2SB1381
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2079
・Low collector saturation voltage
・High DC current gain
APPLICATIONS
・High power switching applications
・Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-peak
-8
A
IB
Base current
-0.5
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1381
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-2.5A; IB=-5mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-5A; IB=-20mA
-3.0
V
Base-emitter saturation voltage
IC=-2.5A; IB=-5mA
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-2.5
mA
hFE-1
DC current gain
IC=-2.5A ; VCE=-3V
1500
hFE-2
DC current gain
IC=-7A ; VCE=-3V
500
VBEsat
CONDITIONS
MIN
TYP.
MAX
-100
UNIT
V
15000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=-5mA
VCC=-25V ,RL=10Ω
2
0.8
μs
2.5
μs
2.0
μs
JMnic
Product Specification
2SB1381
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3