JMnic Product Specification 2SC5101 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1909 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A IB Base current 4 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ 1 JMnic Product Specification 2SC5101 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A 0.5 V ICBO Collector cut-off current VCB=200V ;IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 250 pF 0.24 μs 4.32 μs 0.40 μs 140 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;RL=12Ω IB1=-IB2=0.5A VCC=60V hFE classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SC5101 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC5101 Silicon NPN Power Transistors 4