JMnic Product Specification 2SC3857 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1493 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A IB Base current 5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3857 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 3.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 250 pF 0.30 μs 2.40 μs 0.40 μs 200 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V hFE classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SC3857 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC3857 Silicon NPN Power Transistors 4