Product Specification www.jmnic.com 2SD1023 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・High DC current gain ・With TO-220 package PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-Continuous 5 A ICM Collector current-Peak 8 A IB Base current 0.5 A IBM Base current-Peak 1 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1023 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA 1.5 V VBEsat Emitter-base saturation voltage IC=3A ;IB=5mA 2.0 V ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=3V fT Transition frequency IC=0.5A ; VCE=10V ton Turn-on time ts Storage time tf Fall time 1500 30000 20 MHz IC=3A; IB=5mA RL=10Ω VBB2=4V 2 μs 8 μs 5 μs THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case JMnic VALUE UNIT 4.17 ℃/W Product Specification www.jmnic.com 2SD1023 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic