JMNIC 2SD2082

Product Specification
www.jmnic.com
2SD2082
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・DARLINGTON
・Complement to type 2SB1382
APPLICATIONS
・Driver for Solenoid, Motor
and General Purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
16
A
ICM
Collector current-peak
26
A
IB
Base current
1
A
PC
Collectorl power dissipation
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD2082
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=8A;IB=16m A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=8A;IB=16m A
2.5
V
Collector-emitter breakdown voltage
IC=10mA;IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
mA
ICBO
Collector cut-off current
VCB=120V; IE=0
10
μA
hFE
DC current gain
IC=8 A ; VCE=4V
fT
Transition frequency
IC=1 A ; VCE=12V
20
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
210
pF
0.6
μs
7.0
μs
1.5
μs
VCEO(BR)
120
V
2000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A IB1=-IB2=16mA
VCC=40V ,RL=5Ω
JMnic
Product Specification
www.jmnic.com
2SD2082
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic