SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). 2 UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse * ICP -3 Base Current IB -300 mA Collector Power Dissipation** PC 350 mW Junction Temperature Tj 150 Tstg -55 150 P Storage Temperature Range A MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1. EMITTER 2. BASE 3. COLLECTOR * Pulse Width = 300 S, Duty Cycle 2%. ** Package Mounted on 99.5% Alumina 10 8 DIM A B C D E G H J K L M N P M K Collector Current P J RATING 3 1 N SYMBOL H A ) C CHARACTERISTIC L G MAXIMUM RATING (Ta=25 E B L Higher Efficiency Leading to Less Heat Generation. D High Collector Current Capability : IC and ICP. SOT-23 0.6mm. MARKING Lot No. Type Name KMA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A -120 - - V Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=-1mA -100 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A -5 - - V Collector Cut-Off Current ICBO VCB=-80V, IE=0A - - -100 nA Emitter Cut-Off Current IEBO VEB=-4V, IC=0A - - -100 nA ICES nA Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** VCES=-80V, VBE=0V - - -100 VCE(sat) (1) IC=-250mA, IB=-25mA - - -0.12 VCE(sat) (2) IC=-500mA, IB=-50mA - - -0.18 VCE(sat) (3) IC=-1A, IB=-100mA - - -0.32 VBE(sat) IC=-1A, IB=-100mA - - -1.1 V VCE=-5V, IC=-1A - - -1.0 V VBE Base-Emitter Voltag DC Current Gain ** hFE(1) VCE=-5V, IC=-1mA 150 - - hFE(2) VCE=-5V, IC=-250mA 150 - - hFE(3) VCE=-5V, IC=-500mA 150 - 450 hFE(4) VCE=-5V, IC=-1A 125 - - VCE=-10V, IC=-50mA, f=100MHz 100 - - MHz - 17 - pF fT Transition Frequency Collector Output Capacitance V Cob VCB=-10V, f=1MHz ** Pulse Width = 300 S, Duty Cycle 2%. 2010. 2. 24 Revision No :3 1/3 KTA1571S -1 VCE(sat) - I C IC/IB=10 Ta=100 C -10-1 Ta=25 C -10-2 -10-1 -1 -10 Ta=-55 C -102 -103 -104 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C -1 Ta=25 C -10-1 IC/IB=50 IC/IB=20 -10-2 -10-1 -1 COLLECTOR CURRENT I C (mA) 600 IC/IB=10 Ta=-55 C Ta=25 C Ta=100 C -10-1 -10-1 -1 -10 -102 -103 VCE=-10V Ta=100 C 400 Ta=25 C 200 Ta=-55 C 0 -10-1 -104 -1 COLLECTOR CURRENT IC (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -2 IC/IB=20 Ta=25 C -1 -1 -10 -102 -103 COLLECTOR CURRENT I C (mA) 2010. 2. 24 Revision No : 3 -103 -104 I C - VCE VBE(sat) - I C -10-1 -10-1 -102 -10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) -10 -104 h FE - I C DC CURRENT GAIN h FE BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -1 -103 COLLECTOR CURRENT I C (mA) VBE(sat) - I C -10 -102 -10 -104 IB=36mA IB=31.5mA -1.6 -1.2 IB=27mA IB=9mA -0.8 IB=13.5mA IB=4.5mA IB=18mA -0.4 0 IB=45mA IB=40.5mA Ta=25 C IB=22.5mA 0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTA1571S COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA -10000 IC MAX(PULSE)* 100mS -1000 10mS* 1mS* IC MAX(CONTINUOUS) -100 DC OPERATION(Ta=25 C) -10 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.1 -1 -10 -100 -1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 3 3/3