Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB936A TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE(sat). +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -10 A Peak collector current ICP -20 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-emitter voltage VCEO IC = -10mA, IB = 0 Collector-base cutoff curent ICBO VCB = -50 V,IE = 0 Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 Forward current transfer ratio hFE Min Typ Max -40 VCE = -2 V, IC = -3 A 90 VCE = -2 V, IC = -0.1 A 45 Unit V -50 ìA -50 ìA 260 V Base-emitter saturation voltage VBE(sat) IC = -10 A, IB = -0.33 A -1.5 V Collector-emitter saturation voltage VCE(sat) IC = -10 A, IB = -0.33 A -0.6 V Transition frequency fT Collector output capacitance Cob Turn-on time ton Storage time tstg Fall time tf VCE = -10 V, IC = -0.5 A , f = 10 MHz 100 MHz VCB = -10V , IE = 0 , f = 1.0MHz 400 pF 0.1 ìs 0.5 ìs 0.1 ìs IC = -3 A,IB1 = -0.1 A,IB2 = 0.1 A, VCC = -20 V hFE Classification Rank Q P hFE 90 180 130 260 www.kexin.com.cn 1