Transistors SMD Type P-Channel 2.5-V (G-S) MOSFET KI2301BDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 RoH Lead (Pb)-Free Version is RoHS Compliant. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) *2 TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current *1 IDM -2.4 -1.9 -2.2 -1.8 A -10 A Continuous Source Current (diode conduction) *2 IS -0.72 -0.6 A Power Dissipation *2 TA=25 -------------------------------------------------TA=70 PD 0.9 0.57 0.7 0.45 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 * 1. Pulse width limited by maximum junction temperature. * 2. Surface Mounted on FR4 Board, t 5 sec. Thermal Resistance Ratings Ta = 25 Parameter Symbol Maximum Junction-to-Ambient *1 RthJA Maximum Junction-to-Ambient *2 * 1. Surface Mounted on FR4 Board, t Typical Maximum 120 145 140 175 Unit /W 5 sec. * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors SMD Type KI2301BDS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = Min Typ Max -20 -0.95 8V 100 VDS = -20 V, VGS = 0 V -1 VDS = -20 V, VGS = 0 V, TJ = 55 -10 VDS -5 V, VGS = -4.5 V -6 VDS -5 V, VGS = -2.5 V -3 VGS = -4.5 V, ID = -2.8 A 0.08 0.1 0.15 VGS = -2.5 V, ID = -2.0 A 0.11 VDS = -5 V, ID = -2.8 A 6.5 Diode Forward Voltage * VSD IS = -0.75 A, VGS = 0 V -0.8 -1.2 4.5 10 Total Gate Charge Qg Qgs Gate-Drain Charge Qgd VDS = -6V ,VGS = -4.5 V , ID= -2.8 A 1.1 375 Ciss Coss Reverse Transfer Capacitance Crss 65 td(on) 20 30 tr 40 60 30 45 20 30 tf * Pulse test: PW 300 ìs duty cycle Marking Marking L1 www.kexin.com.cn 2%. V nC 0.7 Input Capacitance Turn-Off Time A S Output Capacitance td(off) nA A gfs Gate-Source Charge Unit V -0.45 Forward Transconductance * Turn-On Time 2 Testconditons V(BR)DSS VGS = 0 V, ID = -250 ìA VDS = -6V ,VGS = 0 , f = 1 MHz VDD = -6V , RL = 6Ù , ID = -1A , VGEN =- 4.5V , RG = 6Ù pF 95 ns