Transistors IC SMD Type Complementary 20-V (D-S) Low-Threshold MOSFET KI1501DL SOT-363 Unit: mm 0.36 +0.15 2.3-0.15 PIN Configuration +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current Maximum Power Dissipation* IDM TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* *Surface Mounted on FR4 Board, t V 8 8 250 -180 mA 200 -140 mA 500 -500 mA 0.2 W 0.13 W TJ, Tstg -55 to 150 RthJA 625 /W 10 sec. www.kexin.com.cn 1 Transistors IC SMD Type KI1501DL Electrical Characteristics TJ = 25 Parameter Drain Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS( th) IGSS Gate Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On State Drain Currenta Drain Source On State Resistance*1 rDS(on) Forward Transconductance*1 gfs Diode Forward Voltage*1 VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Time td(on) Rise Time Turn Off Delay Time Fall Time Testconditons Symbol tr td( off) tf Min Typ N-Ch 20 24 VGS = 0 V, ID =-10 A P-Ch -20 -24 VDS = VGS, ID = 50 A N-Ch 0.4 0.9 1.5 VDS = VGS, ID = -50 P-Ch -0.4 -0.9 -1.5 VGS = 0 V, ID = 10 A VDS = 0 V VGS = 8V 2 www.kexin.com.cn N-Ch 2 P-Ch 2 100 N-Ch 0.001 VDS = -20 V, VGS = 0 V P-Ch -0.001 -100 100 VDS = 20 V, VGS = 0 V, TJ = 55 N-Ch 1 VDS = -20 V, VGS = 0 V, TJ = 55 P-Ch -1 VDS 2.5 V, VGS = 5.0 V N-Ch 120 VDS -2.5 V, VGS = -5.0 V P-Ch -120 VDS 4.5 V, VGS = 8.0 V N-Ch 400 VDS -4.5 V, VGS = -8.0 V P-Ch -400 N-Ch 1.6 2.5 VGS = -2.5 V, ID = -75 mA P-Ch 4 5 VGS = 4.5 V, ID = 250 mA N-Ch 1.2 2.0 VGS = -4.5 V, ID = -180 mA P-Ch 2.6 3.8 VDS = 2.5 V, ID = 50 mA N-Ch 150 VDS = -2.5 V, ID = - 50 mA P-Ch 200 IS = 50 mA, VGS = 0 V N-Ch 0.7 1.2 P-Ch -0.7 -1.2 N-Channel N-Ch 300 450 450 VDS = 5 V, VGS = 4.5 V, ID = 100 mA P-Ch 300 P-Channel N-Ch 25 VDS = -5 V, VGS = -4.5 V, ID = -mA *2 P-Ch 25 N-Ch 100 P-Ch 100 N-Channel N-Ch 15 VDS = 5 V, VGS = 0 V P-Ch 15 N-Ch 11 P-Ch 11 N-Ch 5 P-Ch 5 V pF N-Ch 7 12 VDD = 3 V, RL = 100 P-Ch 7 12 ID= 0.25 A, VGEN = 4.5 V, Rg = 10 N-Ch 25 35 P-Ch 25 35 N-Ch 19 30 VDD = -3 V, RL = 100 P-Ch 19 30 ID= -0.25 A, VGEN = -4.5 V, Rg = 10 N-Ch 9 15 P-Ch 9 15 300 s, duty cycle 2%. A pC N Channel P-Channel nA mS IS = -50 mA, VGS = 0 V P-Channel V mA VGS = 2.5 V, ID = 150 mA VDS = -5 V, VGS =0 V *2 Unit 100 VDS = 20 V, VGS = 0 V *1 Guaranteed by design, not subject to production testing. *2 Pulse test; pulse width A Max ns