Transistors IC SMD Type P-Channel 30-V (D-S) MOSFET KI2307BDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 RoHS Compliant +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ=150 ) * TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current * IDM -3.2 -2.6 -2.5 -2.0 -12 A A Continuous Source Current (diode conduction) *2 IS -1.25 -0.75 A Power Dissipation * TA=25 -------------------------------------------------TA=70 PD 1.25 0.8 0.75 0.48 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 * Surface Mounted on FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Symbol Maximum Junction-to-Ambient *1 Maximum Junction-to-Ambient *2 * 1. Surface Mounted on FR4 Board, t RthJA Steady State Typical Maximum 80 100 130 166 Unit /W 5 sec. * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2307BDS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) A VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = VDS -10 V, VGS = -10 V Gate-Drain Charge Qgd -3.0 100 -6 0.063 0.078 VGS = -4.5 V, ID = -2.5 A 0.105 0.130 VDS = -15V ,VGS = -10 V , ID= -1.7 A 5.0 -0.85 -1.2 9.0 15 2.4 f = 1.0 MHz 8 Rg Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 75 td(on) 9 20 12 20 25 40 14 21 td(off) tf * Pulse test: PW 300 ìs duty cycle Marking Marking www.kexin.com.cn L7 2%. V nC 1.4 Input Capacitance Turn-Off Time A S Gate Resistance tr nA A VGS = -10 V, ID = -3.2 A IS = -0.75A, VGS = 0 V Unit V -1.0 -10 VSD Qg -30 VDS = -30 V, VGS = 0 V, TJ = 55 Diode Forward Voltage * Qgs Max -1 VDS = -10 V, ID = -3.2 A Total Gate Charge Typ VDS = -30 V, VGS = 0 V gfs Gate-Source Charge Min 20 V Forward Transconductance * Turn-On Time 2 Testconditons 380 VDS = -15V ,VGS = 0 , f = 1 MHz VDD = -15V , RL = 15 , ID = -1A , VGEN =- 4.5V , RG = 6 pF 100 ns