MICROSEMI APTGT300A120G

APTGT300A120G
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
Q1
G1
E1
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
OUT
Q2
G2
E2
0/VBUS
VBUS
0/VBUS
OUT
E1
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
G2
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
420
300
600
±20
1380
Tj = 125°C
600A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2006
E2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT300A120G – Rev 1
G1
VCES = 1200V
IC = 300A @ Tc = 80°C
APTGT300A120G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
1.4
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 300A
R G = 1.8Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 300A
R G = 1.8Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 300A
Tj = 125°C
R G = 1.8Ω
Fall Time
Tf
Min
Test Conditions
VR=1200V
IF = 300A
VGE = 0V
IF = 300A
VR = 600V
di/dt =3000A/µs
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Typ
1.7
2.0
5.8
Typ
21
1.2
0.9
260
30
420
Max
Unit
500
2.1
µA
6.5
600
V
nA
Max
Unit
V
nF
ns
70
290
50
520
ns
90
30
mJ
30
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
300
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
27
54
15
27
Max
500
700
Unit
V
µA
A
2.1
V
ns
µC
July, 2006
Symbol Characteristic
mJ
2-5
APTGT300A120G – Rev 1
Electrical Characteristics
APTGT300A120G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.09
0.17
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT300A120G – Rev 1
July, 2006
SP6 Package outline (dimensions in mm)
APTGT300A120G
Typical Performance Curve
Output Characteristics (VGE =15V)
600
V GE=17V
TJ=125°C
300
VGE=15V
300
200
200
100
100
VGE =9V
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
600
1
50
TJ=125°C
E (mJ)
300
TJ=125°C
4
Eon
Eoff
Er
37.5
Eon
25
200
3
VCE = 600V
VGE = 15V
RG = 1.8Ω
TJ = 125°C
62.5
400
2
VCE (V)
Energy losses vs Collector Current
75
TJ=25°C
500
12.5
100
0
0
5
6
7
8
9
V GE (V)
10
11
0
12
100
200
300
400
500
600
IC (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
70
700
VCE = 600V
VGE =15V
IC = 300A
T J = 125°C
60
50
Eon
600
500
Eoff
40
30
IC (A)
E (mJ)
VGE =13V
400
400
0
IC (A)
T J = 125°C
500
TJ=25°C
IC (A)
IC (A)
500
Output Characteristics
600
Er
400
300
20
200
10
100
0
VGE =15V
T J=125°C
RG=1.8 Ω
0
0
2
4
6
8
10
Gate Resistance (ohms)
12
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.9
IGBT
0.7
July, 2006
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT300A120G – Rev 1
Thermal Impedance (°C/W)
0.1
APTGT300A120G
Forward Characteristic of diode
600
VCE =600V
D=50%
RG=1.8Ω
T J=125°C
Tc=75°C
50
ZVS
40
ZCS
30
T J=25°C
500
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
T J=125°C
300
200
20
10
T J=125°C
100
Hard
switching
0
0
0
50
0
100 150 200 250 300 350 400
IC (A)
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.2
0.16
0.12
0.9
Diode
0.7
0.5
0.08
0.04
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT300A120G – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)