APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Q3 11 • Solar converter Features 19 Q2 22 7 23 8 CR2 26 10 Q4 CR4 4 27 • Q1, Q3 (Trench & Field Stop IGBT®) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current 3 29 30 31 15 32 R1 16 • • • • Top switches : Trench + Field Stop IGBT® Bottom switches : FAST NPT IGBT® 28 27 26 25 20 19 18 23 22 16 30 15 31 14 32 13 3 4 7 8 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits 29 2 • Q2, Q4 (FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 50 kHz - RBSOA & SCSOA rated - Low tail current 10 11 12 • • • • Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant www.microsemi.com 1-9 APTGV25H120T3G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com June, 2007 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 APTGV25H120T3G All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 40 25 50 ±20 156 Tj = 125°C 50A @ 1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operation Area Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω VGE = ±15V Tj = 25°C VBus = 600V Tj = 125°C IC = 25A Tj = 25°C RG = 27Ω Tj = 125°C Min Typ 1800 82 90 30 420 pF ns 70 90 50 520 ns 90 1.9 2.5 1.9 2.9 mJ 0.8 °C/W June, 2007 Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time www.microsemi.com 2-9 APTGV25H120T3G – Rev 0 Symbol Cies Cres Td(on) Tr Td(off) APTGV25H120T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Maximum Reverse Leakage Current Min VR=1200V Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 30A VR = 800V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C IF = 30A IF = 60A IF = 30A Diode Forward Voltage Typ 1200 DC Forward Current trr RthJC Test Conditions Maximum Peak Repetitive Reverse Voltage Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C 380 360 Tj = 125°C 1700 Junction to Case Thermal resistance µA A 3.1 V ns nC 1.2 °C/W 2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 40 25 100 ±20 208 Tj = 125°C 50A@1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ VGE = 0V VCE = 1200V 2.5 4 3.2 4.0 Max 250 500 3.7 6 400 Unit µA V V nA June, 2007 ICES Test Conditions www.microsemi.com 3-9 APTGV25H120T3G – Rev 0 Symbol Characteristic APTGV25H120T3G Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω VGE = 15V Tj = 125°C VBus = 400V IC = 25A Tj = 125°C RG = 22Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Min Typ 1650 250 110 160 10 70 60 50 305 Max Unit pF nC ns 30 60 50 346 ns 40 3.5 mJ 1.5 0.6 °C/W Max Unit 2.2 Bottom diode characteristics VRRM IRM Test Conditions Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage VR=1200V Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C trr Typ 1200 Maximum Peak Repetitive Reverse Voltage IF RthJC Min Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C 380 360 Tj = 125°C 1700 Junction to Case Thermal resistance µA A 3.1 V ns nC 1.2 °C/W Max Unit kΩ K Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 June, 2007 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T www.microsemi.com 4-9 APTGV25H120T3G – Rev 0 Symbol Characteristic APTGV25H120T3G 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic Min 2500 -40 -40 -40 2.5 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max Unit V 150* 125 100 4.7 110 °C N.m g Tj=175°C for Trench & Field Stop IGBT 5. SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com 6. Top switches curves 6.1 Top Trench + Field Stop IGBT® typical performance curves Output Characteristics (VGE=15V) Output Characteristics 50 TJ = 125°C TJ=25°C VGE=17V TJ=125°C VGE=15V 30 20 20 10 10 June, 2007 30 IC (A) IC (A) VGE=13V 40 40 VGE=9V 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 www.microsemi.com 0 1 2 VCE (V) 3 4 5-9 APTGV25H120T3G – Rev 0 50 APTGV25H120T3G 6 VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 5 40 TJ=25°C 4 30 E (mJ) IC (A) Energy losses vs Collector Current Transfert Characteristics 50 TJ=125°C 20 Eon Eoff Eon 3 2 10 1 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 10 20 Switching Energy Losses vs Gate Resistance 7 E (mJ) 6 5 50 Reverse Bias Safe Operating Area Eon 50 40 4 Eoff 3 30 20 Eon 2 40 60 VCE = 600V VGE =15V IC = 25A TJ = 125°C IC (A) 8 30 IC (A) VGE (V) VGE=15V TJ=125°C RG=27Ω 10 1 0 0 0 40 80 120 160 Gate Resistance (ohms) 200 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) 6.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 80 60 T J=125°C 40 T J=25°C 20 T J=-55°C 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1 0.8 June, 2007 1.2 0.9 0.7 0.5 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-9 APTGV25H120T3G – Rev 0 Thermal Impedance (°C/W) 1.4 APTGV25H120T3G 7. Bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 70 50 TJ=125°C 40 30 20 10 16 TJ=25°C 12 8 TJ=125°C 4 0 0 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 120 250µs Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125°C 20 TJ=25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 15 IC = 25A TJ = 25°C 16 2 2.5 3 3.5 VCE=240V VCE=600V 14 12 10 VCE=960V 8 6 4 2 0 0 16 6 30 60 90 120 150 180 On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 3 Ic=12.5A 2 1 0 -50 Breakdown Voltage vs Junction Temp. 60 Ic, DC Collector Current (A) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 Ic=50A Ic=25A 4 VGE, Gate to Emitter Voltage (V) Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 50 40 30 20 June, 2007 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 10 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 7-9 APTGV25H120T3G – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 60 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGV25H120T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 22Ω 70 65 VGE = 15V 60 55 50 5 15 25 35 45 400 VGE=15V, TJ=125°C 350 300 250 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 22Ω 120 45 tf, Fall Time (ns) 45 55 80 VGE=15V 40 TJ = 125°C 40 35 TJ = 25°C 30 5 15 25 35 45 VCE = 600V, VGE = 15V, RG = 22Ω 20 55 5 ICE, Collector to Emitter Current (A) TJ=125°C, VGE=15V 6 TJ=25°C, VGE=15V 4 4 Eoff, Turn-off Energy Loss (mJ) VCE = 600V RG = 22Ω 8 2 0 VCE = 600V VGE = 15V RG = 22Ω 3 TJ = 125°C 2 TJ = 25°C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Reverse Bias Safe Operating Area 60 VCE = 600V VGE = 15V TJ= 125°C Eon, 25A IC, Collector Current (A) 4 55 Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 15 25 35 45 ICE, Collector to Emitter Current (A) 3 Eoff, 25A 2 1 50 40 30 20 10 0 0 0 10 20 30 40 50 60 0 400 800 1200 June, 2007 tr, Rise Time (ns) 35 Current Fall Time vs Collector Current 0 Eon, Turn-On Energy Loss (mJ) 25 50 25 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 VGE=15V, TJ=25°C VCE = 600V RG = 22Ω VCE, Collector to Emitter Voltage (V) Gate Resistance (Ohms) www.microsemi.com 8-9 APTGV25H120T3G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGV25H120T3G Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Thermal Impedance (°C/W) 0.5 100 80 ZVS VCE = 600V D = 50% RG = 22Ω TJ = 125°C TC= 75°C 60 40 Hard switching ZCS 20 0 50 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 Operating Frequency vs Collector Current 120 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 7.2 Bottom diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 80 60 T J=125°C 40 T J=25°C 20 T J=-55°C 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 June, 2007 0.4 10 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTGV25H120T3G – Rev 0 Thermal Impedance (°C/W) 1.4