NEC UPG2179TB

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2179TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2179TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed
for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5
to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Switch control voltage
: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss
: Lins1 = 0.25 dB TYP. @ f = 0.05 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins2 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins3 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins4 = 0.40 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
• High isolation
: ISL1 = 27 dB TYP. @ f = 0.05 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL2 = 24 dB TYP. @ f = 2.0 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
• Handling power
: Pin (0.1 dB) = +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Pin (1 dB) = +32.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number
µPG2179TB-E4
Package
6-pin super minimold
Marking
G4C
Supplying Form
• Embossed tape 8 mm wide
• Pin 4, 5, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2179TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10454EJ02V0DS (2nd edition)
Date Published March 2004 CP(K)
Printed in Japan
The mark  shows major revised points.
 NEC Compound Semiconductor Devices 2003, 2004
µPG2179TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
G4C
1
(Top View)
2
3
(Bottom View)
6 1
6 6
1
5 2
5 5
2
4 3
4 4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont2
5
INPUT
6
Vcont1
TRUTH TABLE
Vcont1
Vcont2
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
High
ON
OFF
High
Low
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Symbol
Ratings
Vcont
6.0
Unit
Note
V
Input Power
Pin
+33
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note Vcont1 − Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Switch Control Voltage (H)
Vcont (H)
2.5
3.0
5.3
V
Switch Control Voltage (L)
Vcont (L)
−0.2
0
0.2
V
2
Data Sheet PG10454EJ02V0DS
µPG2179TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note1
MIN.
TYP.
MAX.
Unit
−
0.25
0.45
dB
Insertion Loss 1
Lins1
f = 0.05 to 1.0 GHz
Insertion Loss 2
Lins2
f = 1.0 to 2.0 GHz
−
0.30
0.50
dB
Insertion Loss 3
Lins3
f = 2.0 to 2.5 GHz
−
0.35
0.55
dB
Insertion Loss 4
Lins4
f = 2.5 to 3.0 GHz
−
0.40
0.60
dB
Isolation 1
ISL1
f = 0.05 to 2.0 GHz
23
27
−
dB
Isolation 2
ISL2
f = 2.0 to 3.0 GHz
Input Return Loss
Output Return Loss
0.1 dB Loss Compression
Input Power
RLin
RLout
Pin (0.1 dB)
Note2
Note1
20
24
−
dB
f = 0.05 to 3.0 GHz
Note1
15
20
−
dB
f = 0.05 to 3.0 GHz
Note1
15
20
−
dB
f = 2.0 GHz
+25.5
+29.0
−
dBm
f = 2.5 GHz
+25.5
+29.0
−
dBm
f = 0.5 to 3.0 GHz
−
+29.0
−
dBm
Switch Control Current
Icont
No signal
−
4
20
µA
Switch Control Speed
tsw
50%CTL to 90/10%RF
−
50
500
ns
Note1. DC cut capacitor = 1 000 pF at f = 0.05 to 0.5 GHz.
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
1 dB Loss Compression
Pin (1 dB)
Input Power
Test Conditions
MIN.
TYP.
MAX.
Unit
f = 0.5 to 3.0 GHz
−
+32.0
−
dBm
f = 0.5 to 3.0 GHz, 2 tone,
−
+60.0
−
dBm
Note
3rd Order Intermodulation Intercept
Point
IIP3
5 MHz spicing
Note Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution When using this IC, a DC coupling capacitor must be externally attached to the I/O pins.
A DC coupling capacitor with a capacitance of 100 pF or lower is recommended when using a
frequency of 0.5 GHz or higher, and one with a capacitance of 1,000 pF is recommended when
using a frequency of less than 0.5 GHz. The ideal value changes depending on the frequency and
bandwidth used, so select a capacitor with a suitable capacitance according to the usage
conditions.
Data Sheet PG10454EJ02V0DS
3
µPG2179TB
EVALUATION CIRCUIT
OUTPUT2
OUTPUT1
CO
CO
3
2
1
4
5
6
CO
1 000 pF
Vcont2
1 000 pF
INPUT Vcont1
Remark CO : 0.05 to 0.5 GHz 1 000 pF
0.5 to 3.0 GHz 100 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10454EJ02V0DS
µPG2179TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont2
6pin SMM SPDT SW
Vc2
OUTPUT2
C2
C
2
C
4
OUT 2
INPUT
G4C
C1
C3
C1
C1
IN
C
1
C
5
C2
OUT 1
OUTPUT1
Vc1
Vcont1
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
100 pF
1 000 pF
Data Sheet PG10454EJ02V0DS
5
µPG2179TB
TYPICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
INPUT–OUTPUT2
INSERTION LOSS vs. FREQUENCY
0.5
0.4
0.4
0.3
0.3
Insertion Loss Lins (dB)
0.5
0.2
0.1
0
–0.1
–0.2
–0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.4
–0.5
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–0.5
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT–OUTPUT1
ISOLATION vs. FREQUENCY
INPUT–OUTPUT2
ISOLATION vs. FREQUENCY
50
40
40
30
30
Isolation ISL (dB)
50
20
10
0
–10
–20
20
10
0
–10
–20
–30
–30
–40
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT–OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT–OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
50
50
40
40
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
Isolation ISL (dB)
Insertion Loss Lins (dB)
INPUT–OUTPUT1
INSERTION LOSS vs. FREQUENCY
30
20
10
0
–10
–20
–30
30
20
10
0
–10
–20
–30
–40
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PG10454EJ02V0DS
INPUT–OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT–OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
50
50
40
40
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
µPG2179TB
30
20
10
0
–10
–20
–30
–40
30
20
10
0
–10
–20
–30
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
33
f = 1.0 GHz
31
29
Output Power Pout (dBm)
Output Power Pout (dBm)
31
33
27
25
23
21
19
17
15
13
15 17
f = 2.5 GHz
29
27
25
23
21
19
17
15
19 21
23 25
27 29
31
33 35
13
15 17
Input Power Pin (dBm)
19
21 23
25
27 29 31
33
35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10454EJ02V0DS
7
µPG2179TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
8
Data Sheet PG10454EJ02V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPG2179TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10454EJ02V0DS
9
µPG2179TB
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4 - 0110
10
Data Sheet PG10454EJ02V0DS
µPG2179TB
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
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0401