PJ1870 20V Common-Drain Dual N-Channel MOSFET-ESD Protected FEATURES • RDS(ON), [email protected],[email protected]=19mΩ • RDS(ON), [email protected],[email protected]=21mΩ • RDS(ON), [email protected],[email protected]=27mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for Li-lon or Li-Polymer battery packs • ESD Protected 1.5KV HBM • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TSSOP-8 plastic case. • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 1870 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) Parameter Symbol Limit U nit D rai n-Source Voltage VDS 20 V Gate-Source Voltage VGS + 12 V ID 6 A IDM 30 A PD 1.5 0.9 W TJ, TSTG -55 to 150 oC RθJA 83 oC /W C onti nuous D rai n C urrent Pulsed D rai n C urrent 1) TA = 25oC TA = 75oC Maxi mum Power D i ssi pati on Operati ng Juncti on and Storage Temperature Range Juncti on-to-Ambi ent Thermal Resi stance (PC B mounted) 2) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-MAR.29.2006 PAGE . 1 PJ1870 ELECTRICALCHARACTERISTICS P arameter S ymbol Te s t C o n d i t i o n Min Ty p Max D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S = 0 V , ID = 2 5 0 u A 20 - - G a t e Thr e s ho l d Vo l t a g e V G S (th) V D S = V G S , ID = 2 5 0 u A 0 .5 - - D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) V G S = 4 . 5 V , ID = 6 . 5 A - 15 19 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) V G S = 3 . 5 V , ID = 6 . 0 A - 17 21 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) V G S = 2 . 5 V , ID = 5 . 5 A - 21 27 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S V D S = 2 0 V, V G S = 0 V - - 1 Ga te B o d y L e a k a g e IG S S V G S = +1 2 V, V D S = 0 V - - + 10 V D S = 1 0 V , ID = 6 . 5 A , V G S = 5 V - 2 2 .0 - - 4 2 .5 - - 2 .5 - U n it S ta tic V V mΩ uA uA D y n a mic To t a l G a t e C h a r g e Qg nC V D S = 1 0 V , ID = 6 . 5 A VGS = 10V G a t e - S o ur c e C ha r g e Qg s G a t e - D r a i n C ha r g e Qg d - 4 .7 - Td ( o n ) - 18 23 - 28 40 - 140 195 Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e trr Tu r n - O f f D e l a y Ti m e td (o ff) V D D = 1 0 V, RL = 1 0 Ω ID = 1 A , V G E N = 4 . 5 V RG = 3 .6 Ω ns Tu r n - O f f F a l l Ti m e tf - 30 42 In p u t C a p a c i t a n c e Ciss - 1450 - O ut p ut C a p a c i t a nc e Coss - 210 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rs s - 155 - V D S = 1 0 V, V G S = 0 V f = 1 .0 MHz pF S o u rc e -D ra in D io d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e IS - - - 1 .5 A VSD IS = 1 . 5 A , V G S = 0 V - 0 .6 4 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-MAR.29.2006 PAGE . 2 PJ1870 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 40 40 VDS =10V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) VGS= 3.5V, 4.0V, 4.5V, 5.0V 3.0V 30 2.5V 20 2.0V 10 1.5V 30 20 TJ = 125oC 10 -55oC 0 0 1 2 3 4 25oC 0 5 0 0.5 VDS - Drain-to-Source Voltage (V) 30 25 V GS = 2.5V 15 VGS=4.5V 10 5 0 10 20 30 ID =6.5A 30 125oC 20 TJ =25oC 10 0 0 4 6 8 2000 1750 1.2 1 0.8 f = 1MHz V GS = 0V Ciss 1500 1250 1000 750 500 Coss 250 Crss 0 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) FIG.5- On Resistance vs Junction Temperature STAD-MAR.29.2006 10 FIG.4- On Resistance vs Gate to Source Voltage C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) 2 VGS - Gate-to-Source Voltage (V) V GS =4.5 V ID =6.5A 0.6 -50 3 40 40 FIG.3- On Resistance vs Drain Current 1.4 2.5 50 ID - Drain Current (A) 1.6 2 FIG.2- Transfer Characteristic RDS(ON) - On-Resistance (m W) RDS(ON) - On-Resistance (m W ) 35 0 1.5 V GS - Gate-to-Source Voltage (V) Fig. FIG.11-TYPICAL FORWARD CHARACTERISTIC Output Characteristic 20 1 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) FIG.6- Capacitance PAGE . 3 VGS - Gate-to-Source Voltage (V) PJ1870 Vgs Qg Qsw Vgs(th) 10 V D S = 10 V I D = 6 .5 A 8 6 4 2 0 Qg(th) 0 Qgs 1.2 ID =250uA 1.1 1 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) 20 25 30 35 40 45 125 150 26 I D = 250uA 25 24 23 22 21 -50 o 15 Fig.8 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.3 -25 10 Q g - G a te C h a rg e (n C ) Fig.7 - Gate Charge Waveform 0.5 -50 5 Qg Qgd -25 0 25 50 75 100 T J - Junction Te m pe ra ture (o C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS = 0V 10 T J = 125 oC 1 -55 oC 25 oC 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage STAD-MAR.29.2006 PAGE . 4 PJ1870 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-MAR.29.2006 PAGE . 5