SUD70N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 33 0.0065 @ VGS = 4.5 V 27 VDS (V) 30 APPLICATIONS D D DC/DC Converters D Synchronous Rectifiers TO-252 Drain Connected to Tab G D G S Top View S Ordering Information: SUD70N03-04P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC = 25_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 33 ID 70b IDM 100 IS 8.3a A 88 PD W 8.3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.2 1.5 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package. Document Number: 72237 S-40841—Rev. B, 03-May-04 www.vishay.com 1 SUD70N03-04P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V A 0.0043 0.0051 0.0065 0.007 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA 0.0035 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 VDS = 15 V, ID = 20 A W 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz f = 1 MHz 0.5 1.0 1.5 90 135 W 18 VDS = 15 V, VGS = 10 V, ID = 50 A nC 16 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 430 tr Turn-Off Delay Timec 860 tf 12 20 12 20 40 60 10 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 40 80 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. a. Pulse test; pulse width v 300 ms, duty cycle v 2%. a. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10 thru 5 V 150 I D − Drain Current (A) I D − Drain Current (A) 160 4V 120 80 40 100 TC = 125_C 50 25_C 3V −55_C 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72237 S-40841—Rev. B, 03-May-04 SUD70N03-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 180 0.010 RDS(on) − On-Resistance (W) GFS − Transconductance (S) TC = −55_C 150 25_C 120 125_C 90 60 30 0 0.008 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) Ciss 4000 2000 Coss Crss 100 80 100 Gate Charge 10 V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 6000 80 ID − Drain Current (A) Capacitance 8000 60 0 8 VDS = 15 V ID = 50 A 6 4 2 0 0 6 12 18 24 30 0 20 VDS − Drain-to-Source Voltage (V) 1.8 40 60 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.4 I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 1.6 VGS = 10 V ID = 20 A 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72237 S-40841—Rev. B, 03-May-04 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUD70N03-04P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Ambient Temperature Safe Operating Area 1000 40 Limited by rDS(on) 10 ms 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 10 1 ms 10 ms 100 ms 1 Single Pulse TA = 25_C 0.1 0 0 25 50 75 100 125 150 1s 10 s 100 s DC 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72237 S-40841—Rev. B, 03-May-04