SANKEN 2SD2642

Equivalent circuit
2SD2642
V
VCEO
110
V
VEBO
5
V
.V(BR)CEO
IC
6
A
ICBO
Unit
VCB=110V
100max
µA
100max
µA
110min
V
hFE
VCE=4V, IC=5A
5000min∗
IC=5A, IB=5mA
2.5max
16.9±0.3
VEB=5V
IC=30mA
IEBO
10.1±0.2
A
PC
30(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
60typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
Tstg
3.9
1
VCE(sat)
1.35±0.15
1.35±0.15
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
2.4±0.2
2.2±0.2
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
6
5
10
–5
5
–5
0.8typ
6.2typ
1.1typ
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( sat ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
I B =0.1mA
0
0
2
4
I C =3A
0
6
0.5
0.1
Collector-Emitter Voltage V C E (V)
1
5
10
50
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
Typ
1000
500
0.5
1
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE
50000
5000
10000
25˚C
5000
–30˚C
1000
500
100
0.01
56
0.1
Collector Current I C (A)
p)
em
eT
as
(C
)
)
Temp
1
0.5
2
2.5
1
θ j-a – t Characteristics
4
1
0.5
0.3
56
1
5
10
50
100
500 1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
30
80
10
he
at
si
nk
Without Heatsink
Natural Cooling
ite
1
0.5
20
fin
20
DC
10
m
s
0m
s
In
40
10
5
ith
Collector Cur rent I C (A)
60
W
Maximu m Power Dissipa tion P C (W)
Typ
Cu t-of f Fr eque ncy f T (MH Z )
DC Curr ent Gain h FE
50000
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
100
0.01
0
100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
10000
2
(Case
1
–30˚C
2
I C =5A
4
Temp
0.2mA
2
5˚C
4
12
Collector Current I C (A)
0.3 mA
(V CE =4V)
6
3
(Case
0. 4m A
25˚C
mA
Collector Current I C (A)
5
0.
θ j - a (˚C /W)
5mA
6
Collector-Emitter Saturation Voltage V C E (s a t) (V )
1m
A
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
V
IB
4.2±0.2
2.8 c0.5
4.0±0.2
110
Ratings
0.8±0.2
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
±0.2
Symbol
Unit
8.4±0.2
■Electrical Characteristics
Ratings
Symbol
E
Application : Audio, Series Regulator and General Purpose
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
13.0min
Darlington
C
B
10
0.1
Without Heatsink
2
0
–0.02
–0.1
–1
Emitter Current I E (A)
–6
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
161