SANKEN 2SB1560

(7 0 Ω ) E
2SB1560
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
2SB1560
Unit
ICBO
VCB=–160V
–100max
µA
VCEO
–150
V
IEBO
VEB=–5V
–100max
µA
V
V
V(BR)CEO
IC=–30mA
–150min
–10
A
hFE
VCE=–4V, IC=–7A
5000min∗
IB
–1
A
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
Tj
150
°C
fr
VCE=–12V, IE=2A
50typ
MHz
–55 to +150
°C
VCB=–10V, f=1MHz
230typ
pF
COB
4.0
–5
IC
19.9±0.3
VEBO
Tstg
15.6±0.4
9.6
1.8
Conditions
V
5.0±0.2
Unit
–160
2.0
2SB1560
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
VCBO
Symbol
C
Application : Audio, Series Regulator and General Purpose
■Electrical Characteristics
(Ta=25°C)
Equivalent circuit
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
V
2
4.0max
■Absolute maximum ratings
20.0min
Darlington
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–70
10
–7
–10
5
–7
7
0.8typ
3.0typ
1.2typ
0
0
–2
–4
–2
0
–0.2
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–5
–10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
50000
DC Curr ent Gain h F E
Typ
10,000
5,000
125˚C
10000
25˚C
5000
–30˚C
1000
–5
–10
500
–0.2
–0.5
Collector Current I C (A)
–1
–5
–10
0.1
1
5
)
P c – T a Derating
100
10
DC
–5
10
0m
m
s
s
he
50
at
si
nk
Without Heatsink
Natural Cooling
ite
–0.5
fin
–1
20
500 1000 2000
In
40
50 100
Time t(ms)
ith
Typ
)
10
W
Co lle ctor Cu rre nt I C ( A)
–10
Cut- off F req uency f T (M H Z )
80
Temp
0.5
Safe Operating Area (Single Pulse)
–30
–2.5
1
(V C E =–12V)
100
–2
3
Collector Current I C (A)
f T – I E Characteristics (Typical)
60
–1
θ j-a – t Characteristics
Maxim um Power Dissipation P C (W)
DC Curr ent Gain h F E
40,000
–1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–50 –100 –200
Base Current I B (mA)
h FE – I C Characteristics (Typical)
1,000
–0.2
–4
Temp
–7A
I C =–5A
–1
–6
(Case
–2
–10A
–30˚C
I B =–0.4mA
–2
mp)
–0.6m A
–8
(Case
–0.8m A
(V C E =–4V)
e Te
–1.0 mA
Transient Thermal Resistance
Collector Current I C (A)
–1. 2mA
–4
–10
25˚C
–1 .5m A
–6
–3
(Cas
mA
–8
I C – V BE Temperature Characteristics (Typical)
125˚C
– 2 .0
1.4
E
V CE ( sat ) – I B Characteristics (Typical)
Collector Current I C (A)
.
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
θ j - a ( ˚ C/W)
–2
–10
mA
–10
A
5m
Collector-Emitter Saturation Voltage V C E (s at ) (V )
I C – V CE Characteristics (Typical)
5.45±0.1
B
–0.1
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
5
10
–0.05
–3
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
47