SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SA699 VCBO Collector-base voltage -32 Open base 2SA699A VEBO Emitter-base voltage V -50 2SA699 Collector-emitter voltage UNIT -40 Open emitter 2SA699A VCEO VALUE V -40 Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A IB Base current -0.6 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A V(BR)CBO V(BR)CEO CONDITIONS 2SA699 Collector-base breakdown voltage MIN TYP. MAX UNIT -0.4 -1.0 V -1.5 V -40 IC=-1mA;IE=0 2SA699A 2SA699 Collector-emitter breakdown voltage V -50 -32 IC=-10mA; IB=0 2SA699A V -40 ICBO Collector cut-off current VCB=-20V; IE=0 -1 µA ICEO Collector cut-off current VCE=-12V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0; VCB=-5V;f=1MHz 70 pF fT Transition frequency IE=0.5A ; VCB=-5V 150 MHz hFE classifications P Q R 50-100 80-160 100-220 2 50 220 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A PACKAGE OUTLINE Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 5