SavantIC Semiconductor Product Specification 2SB1272 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter -base voltage Open collector -7 V -2 A 10 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1272 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-2mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-2mA -2.5 V ICBO Collector cut-off current VCB=100V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=100V; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE DC current gain IC=-1A ; VCE=-2V 2 MIN 1000 TYP. MAX 10000 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1272