SAVANTIC 2SB995

SavantIC Semiconductor
Product Specification
2SB995
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·High current capacity
·Low collector saturation voltage
APPLICATIONS
·For audio frequency amplifier output
stage applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
-5
A
40
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB995
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA; IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown votage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-3A;IB=-0.3 A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-3A;IB=-0.3 A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
5
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
240
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SB995