SAVANTIC 2SD531

SavantIC Semiconductor
Product Specification
2SD531
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High current capability
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
90
V
VEBO
Emitter-base voltage
Open collector
8
V
5
A
43
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD531
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; RBE=9
90
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
100
V
V(BR)EBO
Emitter-base breakdown votage
IE=5mA; IC=0
8
V
Collector-emitter saturation voltage
IC=4A;IB=0.4 A
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=0.1A ; VCE=2V
VCEsat
CONDITIONS
2
MIN
60
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD531