SavantIC Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 4 V 0.1 A 20.8 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? VALUE UNIT 6.25 ? /W TC=25? THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case SavantIC Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100µA;IC=0 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 10 µA IEBO Emitter cut-off current VEB=3V; IC=0 10 µA hFE DC current gain IC=50mA ; VCE=10V 2 MIN 30 TYP. MAX 240 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1163