SavantIC Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS ·For medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -8 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25 2 TC=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-2A; RBE=<;L=10mH -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ;IB=-8mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ;IB=-80mA -3.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -100 µA ICEO Collector cut-off current VCE=-100V; RBE=< -10 µA hFE DC current gain IC=-4A ; VCE=-3V 1000 20000 Switching times ton Turn-on time tstg Storage time tf IC=-4A ;IB1=-IB2=-8mA VCC=-50V Fall time 2 0.7 µs 3.5 µs 2.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1193