SavantIC Semiconductor Product Specification 2SC3309 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulators and high voltage switching applications ·High speed DC-DC converter application PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 2 A ICM Collector current-peak 4 A IB Base current 0.5 A PC Collector dissipation Ta=25 2.0 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SC3309 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector -base breakdown voltage IE=1mA; IE=0 500 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 8 1.0 µs 2.5 µs 1.0 µs Switching times tr Rise time ts Storage time tf Fall time IB1=-IB2=0.08A VCC<200V;RL=250> PW=20µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3309 SavantIC Semiconductor Product Specification 2SC3309 Silicon NPN Power Transistors 4